Enhanced mechanical strength via contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S734000, C257S750000, C257S762000

Reexamination Certificate

active

07439624

ABSTRACT:
The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

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Pending U.S. Appl. No. 10/964,882, filed Oct. 14, 2004, “Modified via Bottom Structure for Reliability Enhancement”.

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