Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-05-18
2008-10-21
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000, C257S750000, C257S762000
Reexamination Certificate
active
07439624
ABSTRACT:
The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.
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Pending U.S. Appl. No. 10/964,882, filed Oct. 14, 2004, “Modified via Bottom Structure for Reliability Enhancement”.
Bonilla Griselda
Chen Shyng-Tsong
Malone Kelly
Yang Chih-Chao
Cioffi James J.
International Business Machines - Corporation
Patton Paul E
Petrokaitis Joseph
Smith Zandra
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