Enhanced integrity of a high-K metal gate electrode...

Details Enhanced integrity of a high-K metal gate electrode... Enhanced integrity of a high-K metal gate electrode...

2010-10-19

2011-10-18

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE29266

Reexamination Certificate

active

08039342

ABSTRACT:
In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials and may also determine the lateral offset of a strain-inducing semiconductor material.

REFERENCES:
patent: 6093610 (2000-07-01), Rodder
patent: 6373111 (2002-04-01), Zheng et al.
patent: 2007/0034906 (2007-02-01), Wang et al.
patent: 2007/0128786 (2007-06-01), Cheng et al.
patent: 2009/0085123 (2009-04-01), Sato
patent: 2009/0174002 (2009-07-01), Ouyang et al.
patent: 10 2008 011 814 (2009-09-01), None
Translation of Official Communication from German Patent Application 10 2009 055 438.6 dated Oct. 27, 2010.

Affiliated with

Also associated with

Rating

Enhanced integrity of a high-K metal gate electrode... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced integrity of a high-K metal gate electrode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced integrity of a high-K metal gate electrode... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272094