Enhanced integrity of a high-K metal gate electrode...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S305000, C257SE29266

Reexamination Certificate

active

08039342

ABSTRACT:
In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials and may also determine the lateral offset of a strain-inducing semiconductor material.

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patent: 10 2008 011 814 (2009-09-01), None
Translation of Official Communication from German Patent Application 10 2009 055 438.6 dated Oct. 27, 2010.

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