Enhanced atomic layer deposition

Details Enhanced atomic layer deposition Enhanced atomic layer deposition

2011-01-18

2011-01-18

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257SE21013, C257SE29255

Reexamination Certificate

active

07872291

ABSTRACT:
A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF5and NH3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4757360 (1988-07-01), Faraone et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4815962 (1989-03-01), Cardone
patent: 4920071 (1990-04-01), Thomas
patent: 4947221 (1990-08-01), Stewart et al.
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5080928 (1992-01-01), Klinedinst et al.
patent: 5091207 (1992-02-01), Tanaka
patent: 5198029 (1993-03-01), Dutta et al.
patent: 5262199 (1993-11-01), Desu et al.
patent: 5429966 (1995-07-01), Wu et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5822256 (1998-10-01), Bauer et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5855675 (1999-01-01), Doering et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6174377 (2001-01-01), Doering et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6211035 (2001-04-01), Moise et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6348386 (2002-02-01), Gilmer
patent: 6360685 (2002-03-01), Xia et al.
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6410432 (2002-06-01), Hautala et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6444895 (2002-09-01), Nikawa
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6486047 (2002-11-01), Lee et al.
patent: 6492241 (2002-12-01), Rhodes et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6551399 (2003-04-01), Sneh et al.
patent: 6576053 (2003-06-01), Kim et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 6605549 (2003-08-01), Leu et al.
patent: 6617634 (2003-09-01), Marsh et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6653737 (2003-11-01), Horak et al.
patent: 6656282 (2003-12-01), Kim et al.
patent: 6723642 (2004-04-01), Lim et al.
patent: 6727169 (2004-04-01), Raaijmakers et al.
patent: 6737317 (2004-05-01), Marsh et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 7279732 (2007-10-01), Meng et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0048981 (2001-12-01), Suzuki
patent: 2001/0050039 (2001-12-01), Park
patent: 2002/0084480 (2002-07-01), Basceri et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0160125 (2002-10-01), Johnson et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0017717 (2003-01-01), Ahn et al.
patent: 2004/0217410 (2004-11-01), Meng et al.
patent: 62-199019 (1987-09-01), None
patent: 5090169 (1993-04-01), None
patent: 2001-332546 (2001-11-01), None
U.S. Appl. No. 10/229,338, Non-Final Office Action mailed Dec. 15, 2003, 5 pgs.
U.S. Appl. No. 10/229,338, Notice of Allowance mailed May 14, 2004, 2 pgs.
U.S. Appl. No. 10/229,338, Notice of Allowance mailed May 18, 2005, 5 pgs.
U.S. Appl. No. 10/229,338, Response filed Mar. 11, 2004 to Non-Final Office Action mailed Dec. 15, 2003, 12 pgs.
U.S. Appl. No. 10/854,593, Final Office Action mailed Nov. 20, 2006, 11 pgs.
U.S. Appl. No. 10/854,593, Final Office Action mailed Sep. 30, 2005, 11 pgs.
U.S. Appl. No. 10/854,593, Non-Final Office Action mailed Feb. 6, 2007, 6 pgs.
U.S. Appl. No. 10/854,593, Non-Final Office Action mailed Mar. 22, 2005, 10 pgs.
U.S. Appl. No. 10/854,593, Non-Final Office Action mailed May 24, 2006, 10 pgs.
U.S. Appl. No. 10/854,593, Notice of Allowance mailed May 29, 2007, 2 pgs.
U.S. Appl. No. 10/854,593, Response filed Jan. 18, 2007 to Final Office Action mailed Nov. 20, 2006, 11 pgs.
U.S. Appl. No. 10/854,593, Response filed Dec. 30, 2005 to Final Office Action mailed Sep. 30, 2005, 18 pgs.
U.S. Appl. No. 10/854,593, Response filed May 7, 2007 to Non-Final Office Action mailed Feb. 6, 2007, 9 pgs.
U.S. Appl. No. 10/854,593, Response filed Jun. 22, 2005 Non-Final Office Action mailed Mar. 22, 2005, 12 pgs.
U.S. Appl. No. 10/854,593, Response filed Aug. 17, 2006 Non-Final Office Action mailed May 24, 2006, 20 pgs.
“International Technology for Semiconductor Roadmap”, http://public.itrs.net/Files/2001ITRS/Links/1999—SIA Roadmap/, Semiconductor Industry Association, (1999).
Aarik, Jaan , “Atomic layer growth of epitaxial TiO2thin films from TiCI4and H2O on ∝—AI203 substrates”, Journal of Crystal Growth, 242(1-2), (2002), 189-198.
Aarik, Jaan , “Influence of substrate temperature on atomic layer growth and properties of HfO2thin films”,Thin Solid Films, 340(1-2), (1999),110-116.
Aarik, Jaan , “Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures”,Applied Surface Science, 173(1-2), (Mar. 2001), 15-21.
Aarik, Jaan , et al., “Texture Development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition”,Journal of Crystal Growth, 220, (2000),105-113.
Alen, Petra , “Atomic Layer deposition of Ta(AI)N(C) thin films trimethylaluminum as a reducing agent”,Journal of the Electrochemical Society, 148(10), (Oct. 2001), G56

Affiliated with

Also associated with

Rating

Enhanced atomic layer deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced atomic layer deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced atomic layer deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2686349