Energy sensitive resist material and process for device fabricat

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430311, 430330, 430942, G03F 730

Patent

active

056886349

ABSTRACT:
The present invention is directed to a process for device or mask fabrication. In the process, an energy sensitive resist material that is the combination of a matrix polymer and a modifier polymer is formed onto a substrate. The modifier polymer and matrix polymer are phase compatible. In this regard the modifier polymer has a weight average molecular weight of about 5,000 to about 500,000 g/mol, and at least some of the polymer chains are terminated by a halogen moiety. The resist material is patternwise exposed to radiation, thereby introducing a latent image of the pattern into the resist material. The energy depolymerizes the modifier polymer. The modifier polymer is substantially less soluble in a developer solution used to develop the pattern introduced into the resist than is the matrix polymer. Therefore, if the resist material is positive acting, the resist material that is exposed to radiation is substantially more soluble in developer solution than the unexposed resist material. The developer solution is used to selectively remove the exposed portion of the resist material, thereby developing the pattern introduced into the resist material by the patternwise exposure. The resist material is developed in an interruptive manner to reduce the amount of film loss in the portion of the resist material that is not exposed to radiation.

REFERENCES:
patent: 3893127 (1975-07-01), Kaplan et al.
patent: 3898350 (1975-08-01), Gipstein et al.
patent: 4289845 (1981-09-01), Bowden et al.
patent: 4398001 (1983-08-01), Cheng et al.
patent: 4409317 (1983-10-01), Shiraishi
Patent Abstracts of Japan, vol. 013, No. 272 (E-777), 22 Jun. 1989 and JP-A-01 061915 (Hitachi Ltd) (8 Mar. 1989).
"Modeling the Interupted Development of TNS Resist With Time-Dependent Dissolution Rate Equations", Anonymous, IBM Technical Disclosure Bulletin, vol. 33, No. 10A, New York, pp. 1-6, (Mar. 1991).
"Technique for Reversal Processing of Sulfone-Sensitized Resists," Anonymous, IBM Technical Disclosure Bulletin, vol. 26, No. 9, pp. 4680-4682, (Feb. 1994).
Patent Abstracts of Japan, vol. 017, No. 178 (E-1347), 7 Apr. 1993 & JP-A-04 333218 (Fujitsu Ltd) (20 Nov. 1992).
"Free Volume and Viscosity Effects in Polymer Layers: Application to Lithographic Processes", Paniez, P.J., Pons, M.J., Joubert, O.P., SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 483-492.
"Use of a Quartz Crystal Microbalane Rate Monitor to Examine Photoproduct Effects on Resist Dissolution", Hinsberg, W. D., Willson, C. G., Kanazawa, K. K., SPIE vol. 539 Advances in Resist Technology and Processing II (1965) pp. 6-13.
"Improved CD Uniformity as a Function of Developer Chemistry and Process Parameters Derived from a Statistically-Designed Experiment", Christensen, L. D. H., Bell, K. L., Acuna, N. A., SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990) pp. 284-291.
"An In Situ Interferometric Analysis of Resist Devlopment on Photoma Substrates", Novembre, A.E., Tang, W.T., Hsieh, P., SPIE vol. 1087 Integrated Circuit Metrology, Inspection and Process Control III (1989) pp. 460-468.
"Effect of Developmer Type and Agitation of Dissolution of Positive Photoresist", Zee, C., Bell, W.R., Neureuther, A.R., SPIE vol. 920 Advances in Resist Technology and Processing V (1988) pp. 154-161.
"Polymer Compatibility and Incompatiblity", vol. II, (Karl Solc. ed. Harwood Academic, 1982).
"An In Situ Inferometric Analysis of Resist Development on Photomask Substrates" Novembre, 1989, SPIE vol. 1087, pp. 460-468.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Energy sensitive resist material and process for device fabricat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Energy sensitive resist material and process for device fabricat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Energy sensitive resist material and process for device fabricat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1564552

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.