Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1997-02-21
1998-12-01
Baxter, Janet C.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430325, 4302701, 430913, 430945, G03C 500
Patent
active
058436243
ABSTRACT:
The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low.
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T.I. Wallow et al., Evaluation of Cycloolefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photoresists for 193 nm Photolithography, Proceedings of the SPIE, vol. 2724, Mar. 11, 1996, pp. 355-364, XP002053109.
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English translation of JP 1217453/2638887.
Houlihan Francis Michael
Nalamasu Omkaram
Reichmanis Elsa
Wallow Thomas Ingolf
Ashton Rosemary
Baxter Janet C.
Botos Richard J.
Lucent Technologies - Inc.
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