Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-07-03
2007-07-03
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S239000, C438S240000, C438S591000, C438S597000, C257SE21487
Reexamination Certificate
active
10851542
ABSTRACT:
High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOywherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
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Demaray Richard E.
Milonopoulou Vassiliki
Narasimhan Mukundan
Zhang Hong Mei
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Lindsay, Jr. Walter
Symmorphix, Inc.
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