Endpoint detection using laser interferometry

Details Endpoint detection using laser interferometry Endpoint detection using laser interferometry

2006-10-03

2006-10-03

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S060000, C438S014000, C219S121600

Reexamination Certificate

active

07115211

ABSTRACT:
A method and system for determining an endpoint in a (near) real-time environment using statistical process control. By utilizing such control, an endpoint of a semiconductor process (e.g., an etch) can be monitored. Monitoring may lead to increased yields by avoiding or reducing error conditions (e.g., under- or over-etching).

REFERENCES:
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 5632855 (1997-05-01), Jones et al.
patent: 6172329 (2001-01-01), Shoemaker et al.
patent: 2002/0023329 (2002-02-01), Nulman

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