End-point detection

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 20419233, 20429832, G01N 2100

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active

052883671

ABSTRACT:
A wavelength of light is monitored for end-point detection during etching. Spectral data is collected during etching which characterizes variation of light emitted by discharge produced during etching. At least one principal component of the data is calculated. Each principal component has variables, each variable has a weight, and each variable corresponds to a wavelength of the light emitted by the discharge. By examining or analyzing the weights, it is then determined which variable of the principal component varies during etching such that end-point of the etch can be detected by monitoring the wavelength corresponding to the variable.

REFERENCES:
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patent: 4602981 (1986-07-01), Chen et al.
patent: 4611919 (1986-09-01), Brooks
patent: 4846920 (1989-07-01), Keller
patent: 5014217 (1991-05-01), Savage
patent: 5097430 (1992-03-01), Birang
patent: 5160402 (1992-11-01), Cheng
Khourky, "Real-Time Etch Plasma Monitor System", IBM Technical Disclosure Bulletin, vol. 25, No. 11A Apr. 1983.
"Partial Least-Squares Regression: A Tutorial" by Paul Geladi and Bruce R. Kowalski, 1986 Elsevier Science Publishers B.V.
Rawlings, John O., "Applied Regression Analysis", Wadsworth & Brooks/Cole 1988.

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