Emitter-switched power actuator with integrated Zener diode...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S047000

Reexamination Certificate

active

07868382

ABSTRACT:
A power actuator of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor and a low voltage DMOS transistor connected in cascode configuration between a collector terminal of the bipolar transistor and a source terminal of the DMOS transistor and having respective control terminals. Advantageously, the power actuator further comprises at least a Zener diode, inserted between the source terminal of the DMOS transistor and the control transistor of the bipolar transistor.

REFERENCES:
patent: 3739238 (1973-06-01), Hara
patent: 4941030 (1990-07-01), Majumdar
patent: 6207484 (2001-03-01), Kim et al.
patent: 6459139 (2002-10-01), Watanabe et al.
patent: 2004/0033666 (2004-02-01), Williams et al.
patent: 2008/0169506 (2008-07-01), Ronsisvalle et al.
patent: 0966042 (1999-12-01), None

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