Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S047000
Reexamination Certificate
active
07868382
ABSTRACT:
A power actuator of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor and a low voltage DMOS transistor connected in cascode configuration between a collector terminal of the bipolar transistor and a source terminal of the DMOS transistor and having respective control terminals. Advantageously, the power actuator further comprises at least a Zener diode, inserted between the source terminal of the DMOS transistor and the control transistor of the bipolar transistor.
REFERENCES:
patent: 3739238 (1973-06-01), Hara
patent: 4941030 (1990-07-01), Majumdar
patent: 6207484 (2001-03-01), Kim et al.
patent: 6459139 (2002-10-01), Watanabe et al.
patent: 2004/0033666 (2004-02-01), Williams et al.
patent: 2008/0169506 (2008-07-01), Ronsisvalle et al.
patent: 0966042 (1999-12-01), None
Enea Vincenzo
Ronsisvalle Cesare
Iannucci Robert
Jahan Bilkis
Jorgenson Lisa K.
Louie Wai-Sing
Seed IP Law Group PLLC
LandOfFree
Emitter-switched power actuator with integrated Zener diode... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Emitter-switched power actuator with integrated Zener diode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter-switched power actuator with integrated Zener diode... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2739241