Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2006-03-28
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S510000, C438S248000, C438S427000
Reexamination Certificate
active
07019348
ABSTRACT:
An embedded semiconductor product employs a first isolation trench and first isolation region formed therein adjoining a logic cell active region of a semiconductor substrate. The embedded semiconductor product also employs a second isolation trench and second isolation region formed therein adjoining a memory cell active region of the semiconductor substrate. The second isolation trench is deeper than the first isolation trench such that a storage capacitor whose capacitor plate is embedded at least in part within the second isolation region may be formed with enhanced capacitance.
REFERENCES:
patent: 5360753 (1994-11-01), Park et al.
patent: 5696021 (1997-12-01), Chan et al.
patent: 5930107 (1999-07-01), Rajeevakumar
patent: 6090661 (2000-07-01), Perng et al.
patent: 6232202 (2001-05-01), Hong
patent: 6256248 (2001-07-01), Leung
patent: 6420226 (2002-07-01), Chen et al.
patent: 6468855 (2002-10-01), Leung et al.
patent: 6509595 (2003-01-01), Leung et al.
patent: 6573548 (2003-06-01), Leung et al.
patent: 6833602 (2004-12-01), Mehta
patent: 6864151 (2005-03-01), Yan et al.
“A 130 nm Generation High Density Etox™ Flash Memory Technology”, Kenney, IEEE, IEDM 2001, pp. 41-44, Dec. 2001.
Prenty Mark V.
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Assoc.
LandOfFree
Embedded semiconductor product with dual depth isolation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Embedded semiconductor product with dual depth isolation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Embedded semiconductor product with dual depth isolation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3590570