Embedded multi-inductive large area plasma source

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With radio frequency antenna or inductive coil gas...

Reexamination Certificate

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C118S7230IR, C118S7230AN, C315S111510

Reexamination Certificate

active

07976674

ABSTRACT:
Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

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