Embedded capacitors using conductor filled vias

Details Embedded capacitors using conductor filled vias Embedded capacitors using conductor filled vias

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S637000

Reexamination Certificate

active

06908809

ABSTRACT:
Embedded capacitors and a method for manufacturing the embedded capacitors. The method can include the steps of forming at least one bore (115) in a dielectric substrate (100). The dielectric substrate can be mechanically punched or laser cut to form the bore. The bore can be filled with a conductive material (250) to form a first electrode (470). A conductor (360) can be formed on the dielectric substrate, the conductor not being electrically continuous with the first electrode. A depth and/or cross sectional area of the bore can be selected to provide a desired amount of capacitive coupling between the electrode and the conductor. At least a second bore can be formed in the dielectric substrate and filled with a conductive material to form a second electrode. The second electrode can be electrically connected to the first electrode.

REFERENCES:
patent: 5055966 (1991-10-01), Smith et al.
patent: 5339212 (1994-08-01), Geffken et al.
patent: 5396397 (1995-03-01), McClanahan et al.
patent: 6061228 (2000-05-01), Palmer et al.
patent: 6205032 (2001-03-01), Shepherd
patent: 6351880 (2002-03-01), Palmer et al.

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