Embedded capacitor structure in circuit board and method for...

Details Embedded capacitor structure in circuit board and method for... Embedded capacitor structure in circuit board and method for...

2007-07-17

2007-07-17

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S241000, C438S250000, C438S253000, C438S393000, C438S396000, C257S301000, C257SE21247

Reexamination Certificate

active

11264999

ABSTRACT:
An embedded capacitor structure in a circuit board and a method for fabricating the same are proposed. The circuit board is formed with a first circuit layer on at least one surface thereof, wherein the first circuit layer has at least one first electrode plate for the capacitor structure. Then, a dielectric layer is formed on the first circuit layer and made flush with the first circuit layer. The dielectric layer has a relatively low dielectric constant and good fluidity to effectively fill the spaces between patterned traces of the first circuit later. A capacitive material is deposited on the dielectric layer and the first circuit layer. Finally, a second circuit layer is formed on the capacitive material and has at least one second electrode plate corresponding to the first electrode plate, together with the capacitive material disposed in-between, to form the capacitor structure.

REFERENCES:
patent: 6967138 (2005-11-01), Ding
patent: 2005/0081349 (2005-04-01), Chang

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