Embedded bonding pad for backside illuminated image sensor

Details Embedded bonding pad for backside illuminated image sensor Embedded bonding pad for backside illuminated image sensor

2007-07-16

2010-02-09

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S448000, C257SE31124

Reexamination Certificate

active

07659595

ABSTRACT:
The present disclosure provide a microelectronic device. The microelectronic device includes a sensing element formed in the semiconductor substrate; a trench isolation feature formed in the semiconductor substrate; a bonding pad formed at least partially in the trench isolation feature; and interconnect features formed over the sensing element and the trench isolation feature, being coupled to the sensing element and the bonding pad, and isolated from each other by interlayer dielectric.

REFERENCES:
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patent: 6251724 (2001-06-01), Ku et al.
patent: 6617189 (2003-09-01), Lin et al.
patent: 2004/0014308 (2004-01-01), Kellar et al.
patent: 2005/0001318 (2005-01-01), Won
patent: 2005/0176174 (2005-08-01), Leedy
patent: 2008/0246152 (2008-10-01), Liu et al.

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