Elimination of the fast-erase phenomena in flash memory

Details Elimination of the fast-erase phenomena in flash memory Elimination of the fast-erase phenomena in flash memory

2006-05-16

2006-05-16

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S381000

Reexamination Certificate

active

07045419

ABSTRACT:
A method of forming a semiconductor device that includes providing a semiconductor substrate, forming a first insulating layer over the semiconductor substrate, forming a floating gate over the first insulating layer with a reaction gas, wherein the floating gate comprises a microcrystalline material having a grain size of about 50–300 Å, forming a second insulating layer over the floating gate, and forming a control gate over the second insulating layer.

REFERENCES:
patent: 5801401 (1998-09-01), Forbes
patent: 5914896 (1999-06-01), Lee et al.
patent: 6166401 (2000-12-01), Forbes
patent: 6309907 (2001-10-01), Forbes et al.
patent: 6381670 (2002-04-01), Lee et al.
patent: 6586797 (2003-07-01), Forbes et al.
patent: 6746893 (2004-06-01), Forbes et al.
patent: 6762068 (2004-07-01), Forbes et al.
patent: 6794255 (2004-09-01), Forbes et al.
patent: 6835638 (2004-12-01), Forbes et al.
Seiichi Mori et al., “Polyoxide Thinning Limitation and Superior ONO Interpoly Dielectric for Nonvolatile Memory Devices”, IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 270-277.
Seiichi Mori et al., “ONO Inter-Poly Dielectric Scaling for Nonvolatile Memory Applications”, IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 386-391.

Affiliated with

Also associated with

Rating

Elimination of the fast-erase phenomena in flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Elimination of the fast-erase phenomena in flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Elimination of the fast-erase phenomena in flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3594815