Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-05
2005-04-05
Whitmore, Stacy A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S228000, C438S282000, C438S526000
Reexamination Certificate
active
06875650
ABSTRACT:
On the surface of a semiconductor material of a first conductivity type101a, a lateral MOS transistor100is described surrounded by a well171of the opposite conductivity type and, nested within the well, an electrical isolation region102. The semiconductor region101aembedding this transistor has a resistivity higher than the remainder of the semiconductor material101and further contains a buried layer160of the opposite conductivity type. This layer160extends laterally to the wells171, thereby electrically isolating the near-surface portion of the semiconductor region from the remainder of the semiconductor material, and enabling the MOS transistor to operate as an electrically isolated high-voltage I/O transistor for circuit noise reduction, while having low drain junction capacitance.In the first embodiment of the invention (FIG.1), the buried layer171extends vertically deeper from the surface than the electrical isolation region102, thereby enabling a separate contact106to the electrically isolated near-surface portion101aof the semiconductor region.
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Salling Craig T.
Wu Zhiqiang
Brady III W. James
Pompey Ron
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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