Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-17
2010-06-08
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000, C257S413000, C257SE29156
Reexamination Certificate
active
07732870
ABSTRACT:
The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.
REFERENCES:
patent: 5302552 (1994-04-01), Duchateau et al.
patent: 6015752 (2000-01-01), Xiang et al.
patent: 6323130 (2001-11-01), Brodsky et al.
patent: 6468901 (2002-10-01), Maa et al.
patent: 6531396 (2003-03-01), Chi et al.
patent: 6534871 (2003-03-01), Maa et al.
patent: 6905560 (2005-06-01), Cabral et al.
patent: 7119012 (2006-10-01), Carruthera et al.
patent: 2002/0182836 (2002-12-01), Agnello et al.
patent: 2004/0209432 (2004-10-01), Ku et al.
patent: 2004/0266182 (2004-12-01), Ku et al.
patent: 2005/0026428 (2005-02-01), Choi
patent: 2005/0158996 (2005-07-01), Kim et al.
patent: 2005/0202673 (2005-09-01), Chi et al.
patent: 2006/0037680 (2006-02-01), Yamakoshi
patent: 2006/0051596 (2006-03-01), Jensen et al.
patent: 2006/0057844 (2006-03-01), Domenicucci et al.
Detavenier Christophe
Gaudet Simon
Lavoie Christian
Murray Conal E.
Anya Igwe U
Bryant Kiesha R
Internationial Business Machines Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Eliminating metal-rich silicides using an amorphous Ni alloy... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Eliminating metal-rich silicides using an amorphous Ni alloy..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Eliminating metal-rich silicides using an amorphous Ni alloy... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4163036