Elevation of transistor channels to reduce impact of shallow...

Details Elevation of transistor channels to reduce impact of shallow... Elevation of transistor channels to reduce impact of shallow...

2011-01-04

2011-01-04

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S427000, C257SE21548

Reexamination Certificate

active

07863146

ABSTRACT:
Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions.

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