Elevated emitter for double poly BICMOS devices

Details Elevated emitter for double poly BICMOS devices Elevated emitter for double poly BICMOS devices

1994-07-14

1996-09-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257377, 257466, 257571, 257580, 257586, 257588, 257592, 257656, 257754, 437 33, 437 34, 437 63, 437105, 437174, 437186, 437203, H01L 2976, H01L 21265

Patent

active

055571310

ABSTRACT:
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with an elevated emitter structure. An elevation structure raises the BJT emitter above the plane of the base. The elevation structure increases travel distance between a heavily doped base contact region and the emitter and protects against encroachment without increasing the total surface area allocated to the BJT device. A spacer oxide separates the polysilicon base contact and the elevation structure.

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