Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-02
1998-03-24
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257401, H01L 2362
Patent
active
057316147
ABSTRACT:
A plurality of transistors are aligned to form a ladder structure between two well contacts in a semiconductor substrate, the ladder structure including a plurality of elongate gate contacts extending parallel to one another, a plurality of elongate source contacts extending parallel to one another, and a plurality of elongate drain contacts extending parallel to one another, wherein the source contacts and the drain contacts are alternately arranged between the gate contacts. In the ladder structure, a first distance is made greater than a second distance to prevent current localization at respective junctions between a first drain contact and adjacent gate contacts located on opposite sides of the first drain contact, the first drain contact being a one of the plurality of drain contacts which is spaced furthest away from both the two well contacts. The first distance is a distance between the first drain contact and each of the adjacent gate contacts located on opposite sides of the first drain contact, and the second distance is a distance between each of the remaining drain contacts and each of the gate contacts adjacent to the remaining drain contacts.
REFERENCES:
patent: 5208474 (1993-05-01), Yamagata et al.
patent: 5623387 (1997-04-01), Li et al.
Fahmy Wael
Hardy David B.
Samsung Electronics Co,. Ltd.
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