Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-24
1998-06-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257358, 257359, 257360, 257494, H01L 2362
Patent
active
057604460
ABSTRACT:
An electrostatic discharge structure of a semiconductor device is provided. The structure includes a semiconductor substrate doped with P-type impurities; an N-type well formed in a predetermined region of the semiconductor substrate; a P-type pocket well formed in a predetermined region of the N-type well; an N-type active guardline formed in the surface of the N-type well and doped to a concentration higher than that of the N-type well; a P-type active guardline formed in the surface of the P-type pocket well and doped to a concentration higher than that of the P-type pocket well; and an NMOS transistor formed in a surface of the P-type pocket well. Accordingly, even though a negative voltage due to electrostatic charge is temporarily applied to the drain region of the NMOS transistor, a malfunction of an internal circuitry formed in a P-type semiconductor substrate can be prevented.
Park Hee-Choul
Yang Hyang-Ja
Mintel William
Samsung Electronics Co,. Ltd.
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