Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000
Reexamination Certificate
active
11402907
ABSTRACT:
An integrated circuit has functional circuitry coupled to a terminal. An electrostatic discharge protector can be coupled to the terminal to protect the functional circuitry from an electrostatic discharge. A substrate includes a first semiconductor material with a first dopant type. A plurality of drain segments adjoin the substrate. Each of the drain segments has a first conductor, a second conductor, and a third conductor. A central via set in a central region of the drain segment couples the second conductor to the third conductor. A peripheral via set in a peripheral region of the drain segment couples the first conductor to the second conductor. A plurality of source segments adjoin the substrate and laterally interlace with the drain segments. If an electrostatic discharge is detected at the terminal of the integrated circuit, an electrical current of the ESD is directed into the electrostatic discharge protector and distributed substantially uniformly among a plurality of resistive paths in the electrostatic discharge protector.
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Gan Chong-Gim
Lee Jian-Hsing
Wu Juing-Yi
Yaung Dun-Nian
Yu Kuo-Feng
Finnegan Henderson Farabow Garrett & Dunner LLP
Patton Paul E
Smith Zandra V.
Taiwan Semiconductor Manuafacturing Company, Ltd.
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