Electrostatic discharge protection structure and a method...

Details Electrostatic discharge protection structure and a method... Electrostatic discharge protection structure and a method...

2005-04-12

2005-04-12

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000

Reexamination Certificate

active

06878581

ABSTRACT:
A device structure and a method of fabricating an electrostatic discharge (ESD) protection circuit on a semiconductor device. A substrate is provided. A layer of silicon oxide is formed on the substrate. A photoresist mask is formed on the layer of silicon oxide. A species of n-type ions is implanted into the surface to form source/drain regions in the ESD protection area. After removing the photoresist, a metal layer is blanket deposited over the surface. A thermal process is performed to form salicide layers on the source/drain regions. A patterned photoresist is respectively formed to cover a portion of the salicide layer. An etching process is performed to strip away the exposed portion of the salicide layer.

REFERENCES:
patent: 5597758 (1997-01-01), Heim et al.
patent: 5910673 (1999-06-01), Hsu et al.

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