Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-19
1993-12-21
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257361, H01L 2362
Patent
active
052723712
ABSTRACT:
An ESD protection circuit and structure for implementation within an integrated circuit is disclosed. The protection circuit includes a diode, serving as a triggering device, and a lateral bipolar transistor. The triggering voltage of said diode is selected by an implant underlying a first field oxide structure adjacent a first diffused region to which the external terminal is connected. The lateral bipolar transistor uses the first diffused region to which the external terminal is connected as the collector region, a second diffused region opposite the first field oxide structure from said first diffused region as the emitter, and the substrate, or epitaxial layer, as the base. A second field oxide structure encircles the emitter region and has a distance thereacross which is selected in order to provide sufficient base resistance that, upon junction breakdown of the diode, the base-emitter junction of the lateral transistor is forward biased and the transistor turned on.
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Avery, "Using SCR's as Transient Protection Structures in Integrated Circuits," Electrical Overstress/Electrostatic Discharge Symposium Proceeding, (ITT Research Institute, 1983), pp. 177-180.
Rountree, et al., "A Process-Tolerant Input Protection Circuit for Advanced CMOS Processes", Electrical Overstress/Electrostatic Discharge Symposium Proceedings, (EOS/ESD Association and ITT Research Institute, 1988), pp. 201-205.
Bishop William A.
Chan Tsiu C.
Zamanian Mehdi
Anderson Rodney M.
Hille Rolf
Jorgenson Lisa K.
Loke Steven
Robinson Richard K.
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