Electrostatic discharge protection device for a semiconductor ci

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257356, 257357, H01L 2362

Patent

active

055436498

ABSTRACT:
The present invention provides an electrostatic discharge protection device of a semiconductor memory device which comprises a gate and a bulk region of first conduction type which are commonly connected to a first power supply, a first diffused region of second conduction type formed in the bulk region, isolated from the gate by a dielectric and connected to the second power supply, and a second diffused region of second conduction type separated from the first diffused region in the bulk region, isolated from the gate by the dielectric and connected to the signal voltage.

REFERENCES:
patent: 5229635 (1993-07-01), Bessolo et al.

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