Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-01
1996-08-06
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, H01L 2362
Patent
active
055436498
ABSTRACT:
The present invention provides an electrostatic discharge protection device of a semiconductor memory device which comprises a gate and a bulk region of first conduction type which are commonly connected to a first power supply, a first diffused region of second conduction type formed in the bulk region, isolated from the gate by a dielectric and connected to the second power supply, and a second diffused region of second conduction type separated from the first diffused region in the bulk region, isolated from the gate by the dielectric and connected to the signal voltage.
REFERENCES:
patent: 5229635 (1993-07-01), Bessolo et al.
Chin Dae-Je
Kim Tae-Han
Lee Sang-Hoon
Mintel William
Samsung Electronics Co,. Ltd.
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