Electrostatic discharge protection circuit

Details Electrostatic discharge protection circuit Electrostatic discharge protection circuit

1996-04-05

1999-10-05

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 2360, H01L 27092

Patent

active

059628995

ABSTRACT:
A semiconductor memory device conserves chip area by jointly connecting transistors which are respectively connected to pads adjacent to each other. The device includes first and second electrostatic discharge protection MOSFET transistors which have drains respectively connected to pads adjacent to each other and which define a first active area. A common source is arranged between the first and second transistors areas and defines a second active area in common to both transistors. The device is connected to a single power supply at the gates and sources thereof. The transistors also share common active ground lines.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4509067 (1985-04-01), Minami et al.
patent: 4616243 (1986-10-01), Minato et al.
patent: 4688065 (1987-08-01), Kinoshiba et al.
patent: 4780753 (1988-10-01), Ohkura et al.
patent: 5182621 (1993-01-01), Hinooka
patent: 5449940 (1995-09-01), Hirata

Affiliated with

Also associated with

Rating

Electrostatic discharge protection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic discharge protection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1174546