Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-01
2008-08-26
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000
Reexamination Certificate
active
07417287
ABSTRACT:
An electrostatic discharge (ESD) device has a parasitic SCR structure and a controllable trigger voltage. The controllable trigger voltage of the ESD device is achieved by modulating a distance between an edge of a lightly doped well and an edge of a heavily doped region located at two ends of the lightly doped well. Since the distance and the trigger voltage are linearly proportional, the trigger voltage can be set to a specific value from a minimum value to a maximum value.
REFERENCES:
patent: 5548134 (1996-08-01), Tailliet
Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
Doan Theresa T
J.C. Patents
System General Corp.
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