Electrostatic chuck

Details Electrostatic chuck Electrostatic chuck

2007-07-24

2007-07-24

Sircus, Brian (Department: 2836)

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

Reexamination Certificate

active

11272788

ABSTRACT:
The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

REFERENCES:
patent: 5151845 (1992-09-01), Watanabe et al.
patent: 6-97675 (1994-11-01), None
patent: 10-279349 (1998-10-01), None
patent: 11-312729 (1999-11-01), None
patent: 3084869 (2000-07-01), None
patent: 2004-18296 (2004-01-01), None

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