Electrostastic chuck

Details Electrostastic chuck Electrostastic chuck

1994-11-17

1996-06-25

Fleming, Fritz

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

H02N 1300

Patent

active

055306160

ABSTRACT:
An electrostatic chuck for electrostatically clamping a semiconductor wafer while minimizing any plane temperature difference thereof has a dielectric layer joined to a metal plate and an inner electrode disposed in the di-electric layer. The dielectric layer has a raised outer rim disposed on an upper surface thereof along an outer peripheral edge thereof, and a plurality of protrusions disposed on the upper surface radially inwardly of the outer rim, the protrusions having upper surfaces for clamping the semiconductor wafer in direct contact therewith. The volume resistivity of the dielectric layer is 10.sup.9 .OMEGA.m or less, and Rmax (maximum height) of the clamping surfaces of the protrusions 5 is 2.0 .mu.m or less and or Ra (center-line average roughness) thereof is 0.25 .mu.m or less. The ratio of the total area of the clamping surfaces of the protrusions to the entire area of the upper surface of the dielectric layer is equal to or greater than 1% and less than 10%.

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J. Electrochem, Soc., vol. 140, No. 11, Nov. 1993, pp. 3245-3255; by Daviet et al.; "Electrostatic Clamping Applied to Semiconductor Plasma Processing".
Jpn. J. Appl. Phys., vol. 32 (1993) pp. 864-871; Part 1, No. 2, Feb. 1993 by Watanabe et al.; "Relationship between Electrical Resistivity and Electrostatic Force of Alumina Electrostatic Chuck".
Jpn. J. Appln. Phys., vol. 31 (1992) pp. 2145-2150; Part 1, No. 7, Jul. 1992 by Watanabe et al.; "Electrostatic Force and Absorption Current of Alumina Electrostatic Chuck".

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