Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S648000, C438S675000, C438S687000, C257SE21585
Reexamination Certificate
active
11047652
ABSTRACT:
A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.
REFERENCES:
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6323128 (2001-11-01), Sambucetti et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6573606 (2003-06-01), Sambucetti et al.
patent: 6972251 (2005-12-01), Ning
patent: 2003/0010645 (2003-01-01), Ting et al.
patent: 2003/0075808 (2003-04-01), Inoue
patent: 2004/0235237 (2004-11-01), Inoue et al.
A. Kohn, et al., “Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization” Materials Science and Engineering A302 (2001) pp. 18-25.
C.-K. Hu, et al., “Reduced electromigration of Cu wires by surface coating” IBM T.J. Watson Research Center, Yorktown Heights, New York.
P.L. Cavallotti, et al., “Microelectrodeposition of cobalt and its alloys” Proceedings AESF SUR/FIN Annual International Technical Conference, 1999, pp. 325-335.
C.-K. Hu, et al., “Electromigration in On-Chip Single/Dual Damascene Cu Interconnections” Journal of the Electrochemical Society, vol. 149, No. 7, pp. 408-415, 2002.
Cabral, Jr. Cyril
Chiras Stefanie R.
Cooper Emanuel I.
Deligianni Hariklia
Kellock Andrew J.
Conolly Bove Lodge & Hutz LLP
International Business Machines - Corporation
Lebentritt Michael
Lee Cheung
Trepp Robert M.
LandOfFree
Electroplated CoWP composite structures as copper barrier... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electroplated CoWP composite structures as copper barrier..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electroplated CoWP composite structures as copper barrier... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3739382