Electroplated CoWP composite structures as copper barrier...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S648000, C438S675000, C438S687000, C257SE21585

Reexamination Certificate

active

11047652

ABSTRACT:
A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

REFERENCES:
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6323128 (2001-11-01), Sambucetti et al.
patent: 6342733 (2002-01-01), Hu et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6573606 (2003-06-01), Sambucetti et al.
patent: 6972251 (2005-12-01), Ning
patent: 2003/0010645 (2003-01-01), Ting et al.
patent: 2003/0075808 (2003-04-01), Inoue
patent: 2004/0235237 (2004-11-01), Inoue et al.
A. Kohn, et al., “Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization” Materials Science and Engineering A302 (2001) pp. 18-25.
C.-K. Hu, et al., “Reduced electromigration of Cu wires by surface coating” IBM T.J. Watson Research Center, Yorktown Heights, New York.
P.L. Cavallotti, et al., “Microelectrodeposition of cobalt and its alloys” Proceedings AESF SUR/FIN Annual International Technical Conference, 1999, pp. 325-335.
C.-K. Hu, et al., “Electromigration in On-Chip Single/Dual Damascene Cu Interconnections” Journal of the Electrochemical Society, vol. 149, No. 7, pp. 408-415, 2002.

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