Electronic power device integrated on a semiconductor...

Details Electronic power device integrated on a semiconductor... Electronic power device integrated on a semiconductor...

1999-01-27

2002-09-10

Pham, Long (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S235000, C438S236000, C438S313000, C438S336000, C438S341000, C438S340000

Reexamination Certificate

active

06448125

ABSTRACT:

TECHNICAL FIELD
This invention relates to an electronic power device integrated on a semiconductor material.
The invention further relates to a manufacturing process for an electronic power device.
BACKGROUND OF THE INVENTION
As is known, in the conventional technology used in the production of integrated power devices, for example VIPower type technology (VIPower is a trade mark of STMICROELECTRONICS S.r.l. and means vertically intelligent power) or the Smart power BCD type, the isolation between a power portion and a control portion comprised in the power device is produced by the known technique of junction isolation.
More particularly, this technology makes use of an epitaxial growth split in two distinct moments of the process sequence which leads to the production of the device.
The presence of a first epitaxial layer and of a second epitaxial layer overlapping the first is in fact useful for producing buried areas, having an opposite conductivity sign compared to that of the epitaxial layer, which will form areas of isolation including the control portions of the power devices.
This split epitaxial growth further allows the formation of buried areas having the same conductivity type as the epitaxial layer, but with different resistive values.
Although this known technical solution is advantageous as far as certain aspects thereof are concerned, it nevertheless presents certain drawbacks such as:
high production costs for the power device;
high dispersion of resistivity and thickness values (sometimes greater than 10%) and non-uniformity in growth on the slice of semiconductor material on which the device is integrated;
difficulty in alignment of the areas produced in the second epitaxial layer compared to those produced in the first epitaxial layer.
SUMMARY OF THE INVENTION
An embodiment of this invention is an electronic power device integrated in a semiconductor material, with structural and functional features able to overcome the limitations and/or drawbacks previously indicated with respect to the prior art.
The embodiment is directed to a process which allows for the production of improved electronic power devices, which in terms of electric performance and of space used, are better than the devices designed with the above mentioned known techniques.
The method produces electronic power devices without having to use the double epitaxial growth and instead uses an ion implantation at high energy.
The use of high energy ion implants does not lead to high costs in the processes of integration because the machinery used in manufacturing these is very productive, that is, the machinery is able to work a high number of slices of semiconductor material in a short time, and therefore is less expensive.
The features and the advantages of the invention will become clear from the following description of an embodiment thereof, which is herein set as example for descriptive and non limiting purposes, with reference to the attached drawings.


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