Electronic memory circuit and related manufacturing method

Details Electronic memory circuit and related manufacturing method Electronic memory circuit and related manufacturing method

2005-02-08

2005-02-08

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000

Reexamination Certificate

active

06852596

ABSTRACT:
An electronic memory circuit comprises a matrix of EEPROM memory cells. Each memory cell includes a MOS floating gate transistor and a selection transistor. The matrix includes a plurality of rows and columns, with each row being provided with a word line and each column comprising a bit line organized in line groups so as to group the matrix cells in bytes, each of which has an associated control gate line. A pair of cells have a common source region, and each cell symmetrically provided with respect to this common source region has a common control gate region.

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