Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-14
2008-07-15
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21679, C257S202000, C438S201000, C438S211000, C438S257000, C438S183000, C438S321000, C438S926000
Reexamination Certificate
active
07399675
ABSTRACT:
An electronic device can include an NVM array, wherein portions of word lines are formed within trenches. Insulating features are formed over heavily doped regions within the substrate. In one embodiment, charge storage stacks and a control gate electrode layer can be formed and substantially fill the trench. The insulating features help to reduce capacitive coupling between the heavily doped regions and the control gate electrode layer. In a particular embodiment, the insulating features are recessed from a top surface of a layer outside the trenches. The control gate electrode layer can form a substantially continuous electrical path along the lengths of the word lines. This particular embodiment substantially eliminates the formation of stringers or other residual etching artifacts from the control gate electrode layer within the array. A process can be performed to form the electronic device.
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Chindalore Gowrishankar L.
Swift Craig T.
Freescale Semiconductor, Inc
Smith Matthew S.
Stark Jarrett J
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