Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-12-01
2011-12-13
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257SE29021, C438S212000, C438S227000, C438S268000
Reexamination Certificate
active
08076716
ABSTRACT:
An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped region lying adjacent to the primary surface, an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region, and a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the doped horizontal region and the underlying doped region. In another embodiment, the transistor can include a gate dielectric layer, wherein the field-effect transistor is designed to have a maximum gate voltage of approximately 20 V, a maximum drain voltage of approximately 30 V, and a figure of merit no greater than approximately 30 mΩ*nC.
REFERENCES:
patent: 7126193 (2006-10-01), Baiocchi et al.
patent: 7176524 (2007-02-01), Loechelt et al.
patent: 7235845 (2007-06-01), Xu et al.
patent: 7253477 (2007-08-01), Loechelt et al.
patent: 7276747 (2007-10-01), Loechelt et al.
patent: 7282765 (2007-10-01), Xu et al.
patent: 7285823 (2007-10-01), Loechelt et al.
patent: 7397084 (2008-07-01), Loechelt et al.
patent: 7411266 (2008-08-01), Tu et al.
patent: 7446354 (2008-11-01), Loechelt et al.
patent: 7482220 (2009-01-01), Loechelt et al.
patent: 7679146 (2010-03-01), Tu et al.
patent: 7868379 (2011-01-01), Loechelt
patent: 2005/0110065 (2005-05-01), Uchiyama et al.
patent: 2006/0180947 (2006-08-01), Loechelt et al.
patent: 2006/0226451 (2006-10-01), Davies
patent: 2006/0226498 (2006-10-01), Davies
patent: 2007/0057289 (2007-03-01), Davies
patent: 2007/0215914 (2007-09-01), Loechelt
patent: 2008/0265313 (2008-10-01), Loechelt et al.
patent: 2009/0014814 (2009-01-01), Loechelt et al.
patent: 2009/0096021 (2009-04-01), Loechelt et al.
Notice of Allowance mailed Sep. 3, 2010 in Related U.S. Appl. No. 12/337,234.
Office Action mailed Apr. 2, 2010 in Related U.S. Appl. No. 12/337,234.
Notice of Allowance mailed Sep. 3, 2010 in Related U.S. Appl. No. 12/337,271.
N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Data Sheet , CICLON Semiconductor Device Corp., rev 2.7, 8 pages (2008) .
N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A Data Sheet, CICLON Semiconductor Device Corp., rev 1.0, 2 pages (2007).
Office Action mailed Apr. 1, 2010 in Related U.S. Appl. No. 12/337,306.
Declaration Under 37 C.F.R. § 1.132 of Gary H. Loechelt, signed Jun. 15, 2010.7 pgs.
Notice of Allowance mailed Mar. 10, 2011 in Related U.S. Appl. No. 12/337,306.
Arora Ajay K
Semiconductor Components Industries LLC
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