Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Arora, Ajay K (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257SE29021, C438S212000, C438S227000, C438S268000
Reexamination Certificate
active
07868379
ABSTRACT:
An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped region lying adjacent to the primary surface, an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region, and a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the doped horizontal region and the underlying doped region. In another embodiment, the transistor can include a gate dielectric layer, wherein the field-effect transistor is designed to have a maximum gate voltage of approximately 20 V, a maximum drain voltage of approximately 30 V, and a figure of merit no greater than approximately 30 mΩ*nC.
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Arora Ajay K
Semiconductor Components Industries LLC
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