Electronic device and use thereof

Details Electronic device and use thereof Electronic device and use thereof

2003-12-22

2008-03-25

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S728000, C257S734000, C257S773000, C257S776000, C257SE23020

Reexamination Certificate

active

07348680

ABSTRACT:
The electronic device (100) comprises a semiconductor element (1) (e.g. a transistor), an encapsulation (5) and an electrically conductive layer (3) with a first and a second contact pad (11,12), used as signal pads, and a third contact pad (13) used as ground pads. Due to the shape of the contact pads (11,12,13), the spacing (200) is continuous, with a small entrance in between of the first and second contact pads (11,12). Consequently, the parasitic inductance is reduced and the device (100) is suitable for use at frequencies below and above 30 GHz, particularly up to 40 GHz.

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