Electronic device and method of manufacturing the same

Details Electronic device and method of manufacturing the same Electronic device and method of manufacturing the same

2011-04-19

2011-04-19

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S108000, C438S618000, C438S640000, C257SE21575

Reexamination Certificate

active

07928001

ABSTRACT:
The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

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Translation of Chinese Office action for Chinese Document No. 20070149970.8.
Chinese Patent Office issued a Chinese Office Action dated Jul. 31, 2009, Application No. 200710149970.8.

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