Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2008-08-19
2011-10-25
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S287000, C438S591000, C438S688000, C148S285000
Reexamination Certificate
active
08043978
ABSTRACT:
Provided is a novel electronic device that comprises graphite, graphene or the like.An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.
REFERENCES:
patent: 5155566 (1992-10-01), Nakayama et al.
patent: 6579767 (2003-06-01), Park et al.
patent: 6972467 (2005-12-01), Zhang et al.
patent: 7015500 (2006-03-01), Choi et al.
patent: 7115916 (2006-10-01), Avouris et al.
patent: 7180107 (2007-02-01), Appenzeller et al.
patent: 7368791 (2008-05-01), Zhang et al.
patent: 7399703 (2008-07-01), Kawakami
patent: 7402506 (2008-07-01), Levy et al.
patent: 7425487 (2008-09-01), Kreupl et al.
patent: 7439562 (2008-10-01), Auvray et al.
patent: 7714386 (2010-05-01), Pesetski et al.
patent: 7787292 (2010-08-01), Keshavarzi et al.
patent: 7846819 (2010-12-01), Pribat et al.
patent: 7875878 (2011-01-01), Wu et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2004/0061422 (2004-04-01), Avouris et al.
patent: 2005/0079659 (2005-04-01), Duan et al.
patent: 2005/0121728 (2005-06-01), Bao
patent: 2005/0224888 (2005-10-01), Graham et al.
patent: 2005/0266605 (2005-12-01), Kawakami
patent: 2006/0011972 (2006-01-01), Graham et al.
patent: 2006/0118777 (2006-06-01), Hirakata et al.
patent: 2006/0261419 (2006-11-01), Kreupl et al.
patent: 2006/0286737 (2006-12-01), Levy et al.
patent: 2007/0001219 (2007-01-01), Radosavljevic et al.
patent: 2007/0001220 (2007-01-01), Tombler et al.
patent: 2007/0056063 (2007-03-01), Auvray et al.
patent: 2007/0155065 (2007-07-01), Borkar et al.
patent: 2007/0187694 (2007-08-01), Pfeiffer
patent: 2007/0281409 (2007-12-01), Zhang et al.
patent: 2007/0286953 (2007-12-01), MacPherson et al.
patent: 2008/0035494 (2008-02-01), Gomez et al.
patent: 2008/0105949 (2008-05-01), Zhang et al.
patent: 2008/0108214 (2008-05-01), Majumdar et al.
patent: 2008/0128760 (2008-06-01), Jun et al.
patent: 2008/0258207 (2008-10-01), Radosavljevic et al.
patent: 2009/0003028 (2009-01-01), Keshavarzi et al.
patent: 2009/0014757 (2009-01-01), Takulapalli et al.
patent: 2009/0020764 (2009-01-01), Anderson et al.
patent: 2009/0050876 (2009-02-01), Marks et al.
patent: 2009/0087639 (2009-04-01), Li et al.
patent: 2009/0139752 (2009-06-01), Miyazaki et al.
patent: 2009/0140236 (2009-06-01), Wu et al.
patent: 2009/0140237 (2009-06-01), Wu et al.
patent: 2009/0224230 (2009-09-01), Pesetski et al.
patent: 2010/0252812 (2010-10-01), Raychowdhury et al.
patent: 2010/0261338 (2010-10-01), Tsakalakos et al.
patent: WO-98/02449 (1998-01-01), None
Chen et al., The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors, Nano Letters, vol. 5, No. 7, 2005, pp. 1497-1502.
Liang et al., Graphene Transistors Fabricated via Transfer-Printing in Device Active-Areas on Large Wafer, Nano Letters, vol. 7, No. 12, 2007, pp. 3840-3844.
Berger et al., Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics., J. Phys. Chem. B, 108, 2004, pp. 19912-19916.
Sulpizio et al., Nanofabrication of top-gated carbon nanotube-based transistors: Probing electron-electron interactions in one-dimensional systems, J. Mater. Res., vol. 21, No. 11, 2006, pp. 2916-2921.
Klinke et al., Field-Effect Transistors Assembled from Functionalized Carbon Nanotubes, Nano Letters, vol. 6, No. 5, 2006, pp. 906-910.
Definition of “carbon nanotube” from Formula One Technical online glossary.
Fu et al., Carbon Nanotubes Coated with Alumina as Gate Dielectrics of Field-Effect Transistors, Advanced Materials, 18, 2006, pp. 181-185.
Das et al., Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor, Nature Nanotechnology, vol. 3, Apr. 2008, pp. 210-215.
Bullis, Carbon Nantube Computers, Technology Review online, May 2006.
Avouris et al., Carbon Nanotube Electronics, Proceedings of the IEEE, vol. 91, No. 11, 2003, pp. 1772-1784.
Lin et al., Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices, Nano Letters, vol. 8, No. 8, Feb. 2008, pp. 2119-2125.
Fu et al., Generic Approach to Modulate Conductivity and Coat Discontinuous Gate Dielectrics of Carbon Nanotubes, J. Phys. Chem. C, 111, 2007, pp. 8098-8104.
Huang et al., Ultrathin Aluminum Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Nitric Acid Oxidation, IEEE Transactions on Electron Devices, vol. 51, No. 11, 2004, pp. 1877-1882.
H. Miyazaki, et al., “Electric field effect on electron transport of ultra-thin graphite film by A1 top gate”, Meeting Abstracts of the Physical Society of Japan, vol. 62, Issue 2, Part 4, pp. 673-1028 (2007), 24aRA-9 Abs.
H. Miyazaki, et al., “High efficient gate for ultra-thin graphite FET by an A1 electrode,” Extended Absracts (The 68th Autumn Meeting, 2007); The Japan Society of Applied Physics, No. 3, 4p-Q-2 Abs.
J. Sambrook, et al., Molecular Cloning: A Laboratory Manual, Second Edition, pp. 5.61-5.67 (1989).
Aoyagi Yoshinobu
Miyazaki Hisao
Odaka Syunsuke
Tsukagoshi Kazuhito
Birch & Stewart Kolasch & Birch, LLP
Riken
Taylor Earl
Vu David
LandOfFree
Electronic device and method for producing electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electronic device and method for producing electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic device and method for producing electronic device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4263999