Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-07-08
2008-07-08
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S779000, C438S455000, C438S458000
Reexamination Certificate
active
07396779
ABSTRACT:
An electronic apparatus includes an insulative substrate containing an aluminum-based glass and a layer containing a semiconductive material over the substrate. The insulative substrate can include aluminum oxycarbide. The insulative substrate can exhibit a CTE sufficiently close to a CTE of the semiconductive material layer such that a strain of less than 1% would exist between a 1000 Angstroms thickness of the semiconductive material layer and the insulative substrate. The semiconductive material layer can include monocrystalline silicon. The electronic apparatus can be a silicon-on-insulator integrated circuit. An electronic apparatus fabrication method includes forming an insulative substrate containing an aluminum-based glass and forming a layer containing a semiconductive material over the substrate. Forming the insulative substrate can include forming a mixture of a powder containing aluminum, a powder containing silicon, and a powder containing carbon, reacting the mixture by spontaneous ignition, and forming the reacted mixture into a plate. Forming the semiconductive material layer can include removing a layer of silicon from a monocrystalline silicon wafer and bonding the silicon layer to the insulative substrate.
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Micro)n Technology, Inc.
Pham Long
Wells St. John P.S.
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