Electron flood apparatus and ion implantation system

Details Electron flood apparatus and ion implantation system Electron flood apparatus and ion implantation system

2006-10-24

2006-10-24

Berman, Jack (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S251000, C250S398000, C250S42300F, C315S111810

Reexamination Certificate

active

07126138

ABSTRACT:
An electron flood apparatus1of the present invention comprises a chamber22having a first part22amade of conductive material and a second part22bmade of insulating material, and extending along a predefined closed curve Ax. A coil18is provided outside the first part22ato generate a magnetic field in a direction intersecting with the surface formed by the predefined closed curve Ax. The coil18and the chamber22are inductively coupled by the magnetic field. Since the inert gas plasma is generated in the chamber22mainly by inductive coupling, electrons contained in the plasma have a low energy. Here, by applying voltage to an electrode21, electrons having a low energy in the chamber22are emitted from an opening14.

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