Electron emission element with schottky junction

Details Electron emission element with schottky junction Electron emission element with schottky junction

1995-11-13

1996-09-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 257473, 257484, 257623, 313 3, 315244, 315310, 315309, 315311, H01L 2906, H01L 2912

Patent

active

055548598

ABSTRACT:
This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..

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