Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-10-22
2000-03-28
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C30B 3500
Patent
active
060426454
ABSTRACT:
A method for mounting the pull head of a CZ crystal puller includes the steps of mounting the pull head on a frame which is supported independently from the crystal puller receiving chamber. In particular, the pull head is mounted on a rigid frame which is supported by the same surface that supports the melt charge crucible. The pull head is then aligned relative to the rigid frame, rather than to the receiving chamber, and can be accurately aligned with the crucible rotation axis and positioned in order to insure that its rotation axis is vertical. In one embodiment, the method includes the step of mounting the pull head on a plate which engages alignment pins attached to the rigid frame. The alignment pins insure proper alignment of the pull head relative to the frame. When the receiving chamber is raised to allow the crystal to be removed, the plate is engaged by the receiving chamber and lifted off the alignment pins so that the pull head moves with the receiving chamber. When the receiving chamber is moved back into its ingot-growing position and lowered, the alignment pins reengage the plate to realign the pull head. In this embodiment, the method includes the step of connecting the pull head to the receiving chamber by a flexible bellows so that the pull head remains vacuum sealed to the receiving chamber when the chamber is lowered and the alignment pins are engaged.
REFERENCES:
patent: 5254316 (1993-10-01), Oda et al.
patent: 5762703 (1998-06-01), Schulmann et al.
patent: 5846322 (1998-12-01), Schulmann et al.
General Signal Technology Corporation
Hiteshew Felisa
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