Simple method for detecting temperature distributions in single

Details Simple method for detecting temperature distributions in single Simple method for detecting temperature distributions in single

1998-01-29

2000-03-28

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117201, 117202, C30B 1520

Patent

active

060426462

ABSTRACT:
A single crystal is pulled to a length at which the beginning of the body of the single crystal is assumed sufficiently to have been cooled down to a temperature below 1000.degree. C.; then the single crystal being pulled is detached from the molten silicon by pulling it at a speed high enough to cut it out from the molten silicon. Then oxygen precipitation heat-treatment is performed on the single crystal to locate the portion of AOP. AOP arises at the boundary of grown-in defects being formed zone while the single crystal passes through 1100.degree. C., and the position is at about 1100.degree. C. immediately before, detaching the single crystal out from the molten silicon. Therefore, the position at temperature 1100.degree. C. in the single crystal immediately before detaching the single crystal out from the molten silicon are known, then the temperature distributions of the single crystal immediately before detaching it out from the molten silicon can be decided easily. If the speed at which the temperature range near 1100.degree. C. is passed through is controlled, then the occurrence of the defects while growing the single crystal can be controlled.

REFERENCES:
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5853480 (1998-12-01), Kubota et al.

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