Electron cyclotron resonance plasma source

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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118728, 118 501, 118623, 156646, 156345, 2041921, 204298, 427 38, 250423R, 250424, B44C 122, B05B 502, C23C 1400, C03C 1500

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047785616

ABSTRACT:
An electron cyclotron resonance (ECR) plasma source for generating a plasma for etching, deposition, pre-deposition and material property modification processes. The plasma source includes two magnetic field sources. The first magnetic field source provides a magnetic field of sufficient intensity to achieve an ECR condition for a given microwave frequency input beam. The second magnetic field source enhances the uniformity of the plasma formed and the uniformity of the output by creating a uniform field region in the plasma generating chamber. The second magnetic field source also reduces the magnetic field so that the plasma near the extraction system and the output extracted are less magnetized. The magnetic field intensity, longitudinal position, radial position and pole orientation are design variables for adjusting the second magnetic field source to enhance uniformity and reduce the magnetization of the output.
The ECR plasma source also includes a window apparatus which electrically isolates the plasma generating chamber which is at a high potential from the microwave source near ground potential. The window apparatus is cooled and also serves as a pressure isolator between the plasma generating chamber which is at vacuum pressure and the microwave source which is at atmospheric pressure.

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ECR 2000R product brochure by Plasma Technology--discloses ECR Etching System.
ECR 3000R product brochure by Plasma Technology--discloses ECR Deposition System.

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