Electron beam peripheral patterning of integrated circuits

Details Electron beam peripheral patterning of integrated circuits Electron beam peripheral patterning of integrated circuits

1984-01-25

1986-09-09

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430312, 430313, 430316, 430318, 430394, 430942, G03C 500

Patent

active

046109480

ABSTRACT:
Silicon wafers are imprinted with microelectronic circuit patterns by first ithographing the outlines or peripheries of all circuit features of a given wafer level by means of a narrow line formed by direct-writing electron beam lithography utilizing a positive electron resist, then using proximity photoprinting to complete the lithography of that level using a positive photoresist and a photomask with oversized opaque areas so that the pattern edges on the wafer exposed to the flux passing through the photomask will fall within the peripheral lines formed by the electron beam.

REFERENCES:
patent: 4264711 (1981-04-01), Greeneich
patent: 4487795 (1984-12-01), Yasuda et al.
Potosky et al, J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 924-926.
Lin et al, J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1669-1671.

Affiliated with

Also associated with

Rating

Electron beam peripheral patterning of integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electron beam peripheral patterning of integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electron beam peripheral patterning of integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1015409