Electron beam patterning

Details Electron beam patterning Electron beam patterning

2011-06-07

2011-06-07

Chiang, Jack (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

Layout generation

Reexamination Certificate

active

07958464

ABSTRACT:
A method for creating an electron beam pattern exposure, where a pattern of shapes is generated, including at least one of lines and vias. To each shape there is assigned a set of exposure pixels and edge placement constraints. An intensity at each exposure pixel is calculated by using a simplex method, and a latent resist image location is calculated by convolving a proximity function with the pixel intensities. A shape critical dimension and a shape edge slope is statistically evaluated by applying linear regression on the locations of the calculated latent image. The electron beam pattern exposures are produced using dosages linearly optimized on a rotated pixel grid to produce the shape critical dimension and the shape edge slope.

REFERENCES:
patent: 7106490 (2006-09-01), Sandstrom
patent: 7245352 (2007-07-01), Borodovsky et al.
patent: 2006/0141376 (2006-06-01), Levy et al.

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