Electron beam lithography method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Reexamination Certificate

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C430S942000, C369S044130, C369S101000

Reexamination Certificate

active

07141356

ABSTRACT:
Deflecting means, for deflecting an electron beam in a radial direction and the circumferential direction, and blanking means, for shielding irradiation of the electron beam at portions other than drawing portions, are provided. While the disk is rotated unidirectionally, the electron beam is repeatedly deflected in afigure 8pattern, in which the electron beam is deflected toward the next deflection initiation point in the radial direction at track edge portions, such that the deflected directions toward the inner periphery of the disk and toward the outer periphery of the disk intersect each other. Parallel scanning is performed alternately toward the outer periphery and the inner periphery of the disk. Elements of a transfer pattern, having lengths which are integer multiples of a reference value, are drawn by performing scanning a number of times equal to the integer that the reference value is multiplied by.

REFERENCES:
patent: 6735163 (2004-05-01), Marshall
patent: 6930961 (2005-08-01), Wada
patent: 6930971 (2005-08-01), Marshall
patent: 7026098 (2006-04-01), Komatsu et al.
patent: 2002/0172130 (2002-11-01), Wada
patent: 2003/0161222 (2003-08-01), Komatsu et al.
patent: 2004/0057158 (2004-03-01), Usa et al.
patent: 2004/0091817 (2004-05-01), Komatsu et al.
patent: 2004/0240366 (2004-12-01), Tomita
patent: 1 339 059 (2003-08-01), None
patent: 1 347 450 (2003-09-01), None
patent: 1 418 576 (2004-05-01), None
patent: 2001-110050 (2001-04-01), None
patent: 2001-256644 (2001-09-01), None

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