Electron beam lithographic method and apparatus

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430327, 430942, 2504922, 2504923, G03F 720

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054514878

ABSTRACT:
In an electron beam lithographic method including a correction radiation step based on the ghost method, the entire correction region is divided into small regions, each having a size smaller than a spread of backscattering of an electron beam and larger than a minimum figure which can be drawn. Representative figures are set, as radiation unit figures in the respective small regions, to be smaller in number than the number of times of radiation to be performed when the desired patterns in the small regions are drawn as black/white-inverted patterns. Exposure dose are set for the representative figures in the respective small regions. The electron beam is defocused to increase a beam size to a size roughly coinciding with the spread of backscattering, and the representative figures in the respective small regions are drawn with the set exposure dose.

REFERENCES:
patent: 5008553 (1991-04-01), Abe
"Corrections to proximity effects in electron beam lithography, III, Experiments", J. Appl. Phys. 50(6), Jun. 1979, Parikh.
"Proximity effect correction for electron beam lithography by equalization of back-ground dose", J. Appl. Phys. 54(6), Jun. 1983, Owen.
"Measurements of electron range and scattering in high voltage e-beam lithography", J. Vac. Sci. Technol. B3(1), Jan./Feb. 1985, Mankiewich.
"Corrections to proximity effects in electron beam lithography, I. Theory", J. Appl. Phys. 50(6), Jun. 1979, Parikh.
"Representative Figure Method for Proximity Effect Correction", Japanese Journal of Applied Physics, vol. 30, No. 3B, Mar., 1991, pp. L528-L531, Abe.
"Corrections to proximity effects in electron beam lighography, II, Implementation", J. Appl. Phys. 50(6), Jun. 1979, Parikh.
"Proximity effect correction calculations by the integral equation approximate solution method", J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, Pavkovich.
J. Appl. Phys. vol. 65, No. 4, pp. 1776-1781, Feb. 15, 1989, T. K. Leen, "Theory and Practice of Proximity Correction by Secondary Exposure".
Patent Abstracts of Japan, JP-61-284-921, Dec. 15, 1986.

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