Electron beam exposure mask and method of manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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G03F 900, G03C 500

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active

060905271

ABSTRACT:
In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.

REFERENCES:
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patent: 5008553 (1991-04-01), Abe
patent: 5148033 (1992-09-01), Yamada et al.
patent: 5424173 (1995-06-01), Wakabayashi et al.
T.H.P. Chang, "Proximity Effect in Electron-Beam Lithography", J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, pp 1271-1275.

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